Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunnelling diodes

Strong Physical Uncloneable Functions using Arrays of Resonant Tunnelling Diodes

Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Non-volatile memories-providing the information storage functionality-are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understa...

Resonant Tunnelling Optoelectronic Circuits

Nowadays, most communication networks such as local area networks (LANs), metropolitan area networks (MANs), and wide area networks (WANs) have replaced or are about to replace coaxial cable or twisted copper wire with fiber optical cables. Light-wave communication systems comprise a transmitter based on a visible or near-infrared light source, whose carrier is modulated by the information sign...

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

High structural perfection, wafer uniformity, and reproducibility are key parameters for high-volume, low cost manufacture of resonant tunnelling diode (RTD) terahertz (THz) devices. Low-cost, rapid, and non-destructive techniques are required for the development of such devices. In this paper, we report photoluminescence (PL) spectroscopy as a non-destructive characterisation technique for hig...

Resistive switching characteristics of gallium oxide for nonvolatile memory application

Available online 25 October 2012